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M29F016D
16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE - VCC = 5V 10% for PROGRAM, ERASE and READ OPERATIONS
s s
Figure 1. Packages
ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME - 10s per Byte typical 32 UNIFORM 64Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithms
TSOP40 (N) 10 x 20mm
s s
s
ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend
s
UNLOCK BYPASS PROGRAM COMMAND - Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE - 64 bit Security Code LOW POWER CONSUMPTION - Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code: ADh
SO44 (M)
s
s
s
s
s
July 2003
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M29F016D
TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. TSOP Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. SO Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 5. Block Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Address Inputs (A0-A20). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Data Inputs/Outputs (DQ0-DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Reset/Block Temporary Unprotect (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ready/Busy Output (RB). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 VCC Supply Voltage (5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 VSS Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Bus Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Special Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Block Protection and Blocks Unprotection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 2. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Read/Reset Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Auto Select Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Unlock Bypass Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Unlock Bypass Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Unlock Bypass Reset Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Chip Erase Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Block Erase Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Erase Suspend Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Erase Resume Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Read CFI Query Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Block Protect and Chip Unprotect Commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 3. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Table 4. Program, Erase Times and Program, Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 13 STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Data Polling Bit (DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Toggle Bit (DQ6).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Error Bit (DQ5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Erase Timer Bit (DQ3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Alternative Toggle Bit (DQ2).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 5. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 6. Data Polling Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 7. Data Toggle Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 6. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 7. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 8. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 9. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 8. Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 9. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 10. Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 10. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 11. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 11. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 12. Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Table 12. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 13. Reset/Block Temporary Unprotect AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 13. Reset/Block Temporary Unprotect AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 22 PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Outline . . . . . . . . . . . . . . . . 23 TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Mechanical Data . . . . . . . . 23 SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline. . . . . . . . . . . . . . . . 24 SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data . . . . . . . . 24 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 14. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 APPENDIX A. BLOCK ADDRESS TABLE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 15. Block Addresses, M29F016D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 16. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 17. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
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Table 18. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 19. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Table 20. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Table 21. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 APPENDIX C. BLOCK PROTECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Programmer Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 In-System Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 22. Programmer Technique Bus Operations, BYTE = V IH or VIL . . . . . . . . . . . . . . . . . . . . . 31 Figure 14. Programmer Equipment Group Protect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Figure 15. Programmer Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Figure 16. In-System Equipment Group Protect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Figure 17. In-System Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Table 23. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
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M29F016D
SUMMARY DESCRIPTION The M29F016D is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into 32 uniform blocks of 64Kbytes (see Figure 5, Block Addresses) that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in groups of 4 to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing
the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in TSOP40 (10 x 20mm) and SO44 packages. Access times of 55, 70 and 90ns are available. The memory is supplied with all the bits erased (set to '1').
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A20 DQ0-DQ7 Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Supply Voltage Ground Not Connected Internally
VCC
E
21 A0-A20 W E G RP M29F016D
8 DQ0-DQ7
G W RP RB
RB
VCC VSS NC
VSS
AI05269
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Figure 3. TSOP Connections Figure 4. SO Connections
A19 A18 A17 A16 A15 A14 A13 A12 E VCC NC RP A11 A10 A9 A8 A7 A6 A5 A4
1
40
A20 NC W G RB DQ7 DQ6 DQ5 DQ4 VCC VSS VSS DQ3 DQ2 DQ1 DQ0 A0 A1 A2 A3
10 11
M29F016D
31 30
20
21
AI05271
NC RP A11 A10 A9 A8 A7 A6 A5 A4 NC NC A3 A2 A1 A0 DQ0 DQ1 DQ2 DQ3 VSS VSS
1 44 43 2 3 42 4 41 40 5 39 6 38 7 37 8 36 9 35 10 34 11 M29F016D 33 12 32 13 31 14 30 15 29 16 28 17 27 18 26 19 20 25 21 24 22 23
AI05280
VCC E A12 A13 A14 A15 A16 A17 A18 A19 NC NC A20 NC W G RB DQ7 DQ6 DQ5 DQ4 VCC
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Figure 5. Block Addresses
M29F016D Block Addresses
1FFFFFh 64 KByte 1F0000h 1EFFFFh 64 KByte 1E0000h 1DFFFFh 64 KByte 1D0000h 1CFFFFh
Total of 32 64 KByte Blocks
02FFFFh 64 KByte 020000h 01FFFFh 64 KByte 010000h 00FFFFh 64 KByte 000000h
AI05270
Note: Also see Appendix A, Table 15 for a full listing of the Block Addresses.
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SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connected to this device. Address Inputs (A0-A20). The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ0-DQ7). The Data I/O outputs the data stored at the selected address during a Bus Read operation. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine. Chip Enable (E). The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is High, V IH, all other pins are ignored. Output Enable (G). The Output Enable, G, controls the Bus Read operation of the memory. Write Enable (W). The Write Enable, W, controls the Bus Write operation of the memory's Command Interface. Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low, V IL, for at least tPLPX. After Reset/Block Temporary Unprotect goes High, V IH, the memory will be ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last. See the Ready/Busy Output section, Table 13 and Figure 13, Reset/ Temporary Unprotect AC Characteristics for more details. Holding RP at V ID will temporarily unprotect the protected Blocks in the memory. Program and
Erase operations on all blocks will be possible. The transition from VIH to VID must be slower than tPHPHH. Ready/Busy Output (RB). The Ready/Busy pin is an open-drain output that can be used to identify when the device is performing a Program or Erase operation. During Program or Erase operations Ready/Busy is Low, V OL. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase Suspend mode. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy becomes high-impedance. See Table 13 and Figure 13, Reset/Temporary Unprotect AC Characteristics. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy. VCC Supply Voltage (5V). VCC provides the power supply for all operations (Read, Program and Erase). The Command Interface is disabled when the V CC Supply Voltage is less than the Lockout Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data during power up, power down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memory contents being altered will be invalid. A 0.1F capacitor should be connected between the V CC Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply, see Figure 10, AC Measurement Load Circuit. The PCB track widths must be sufficient to carry the currents required during program and erase operations, ICC3. VSS Ground. VSS is the reference for all voltage measurements.
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BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See Tables 2, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Bus Read. Bus Read operations read from the memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address Inputs, applying a Low signal, V IL, to Chip Enable and Output Enable and keeping Write Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 10, Read Mode AC Waveforms, and Table 10, Read AC Characteristics, for details of when the output becomes valid. Bus Write. Bus Write operations write to the Command Interface. A valid Bus Write operation begins by setting the desired address on the Address Inputs. The Address Inputs are latched by the Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH, during the whole Bus Write operation. See Figures 11 and 12, Write AC Waveforms, and Tables 11 and 12, Write AC Characteristics, for details of the timing requirements. Output Disable. The Data Inputs/Outputs are in the high impedance state when Output Enable is High, V IH. Standby. When Chip Enable is High, VIH, the memory enters Standby mode and the Data Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to the Standby Supply Current, ICC2, Chip Enable should Table 2. Bus Operations
Operation Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code
Note: X = VIL or VIH.
be held within VCC 0.2V. For the Standby current level see Table 9, DC Characteristics. During program or erase operations the memory will continue to use the Program/Erase Supply Current, ICC3, for Program or Erase operations until the operation completes. Automatic Standby. If CMOS levels (VCC 0.2V) are used to drive the bus and the bus is inactive for 300ns or more the memory enters Automatic Standby where the internal Supply Current is reduced to the Standby Supply Current, ICC2. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress. Special Bus Operations Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block Protection. These bus operations are intended for use by programming equipment and are not usually used in applications. They require VID to be applied to some pins. Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Tables 2, Bus Operations. Block Protection and Blocks Unprotection. Blocks can be protected in groups of 4 against accidental Program or Erase. See Appendix A, Table 15, Block Addresses, for details of which blocks must be protected together as a group. Protected blocks can be unprotected to allow data to be changed. There are two methods available for protecting and unprotecting the blocks, one for use on programming equipment and the other for in-system use. Block Protect and Chip Unprotect operations are described in Appendix C.
E VIL VIL X VIH VIL VIL
G VIL VIH VIH X VIL VIL
W VIH VIL VIH X VIH VIH
Address Inputs A0-A20 Cell Address Command Address X X A0 = VIL, A1 = VIL, A9 = VID, Others VIL or VIH A0 = VIH, A1 = VIL, A9 = VID, Others VIL or VIH
Data Inputs/Outputs DQ7-DQ0 Data Output Data Input Hi-Z Hi-Z 20h ADh
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COMMAND INTERFACE All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in the memory returning to Read mode. The long command sequences are imposed to maximize data security. Refer to Table 3, Commands, in conjunction with the following text descriptions. Read/Reset Command. The Read/Reset command returns the memory to its Read mode where it behaves like a ROM or EPROM, unless otherwise stated. It also resets the errors in the Status Register. Either one or three Bus Write operations can be used to issue the Read/Reset command. The Read/Reset Command can be issued, between Bus Write cycles before the start of a program or erase operation, to return the device to read mode. Once the program or erase operation has started the Read/Reset command is no longer accepted. The Read/Reset command will not abort an Erase operation when issued while in Erase Suspend. Auto Select Command. The Auto Select command is used to read the Manufacturer Code, the Device Code and the Block Protection Status. Three consecutive Bus Write operations are required to issue the Auto Select command. Once the Auto Select command is issued the memory remains in Auto Select mode until a Read/Reset command is issued. Read CFI Query and Read/ Reset commands are accepted in Auto Select mode, all other commands are ignored. From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with A0 = V IL and A1 = VIL. The other address bits may be set to either V IL or VIH. The Manufacturer Code for STMicroelectronics is 20h. The Device Code can be read using a Bus Read operation with A0 = VIH and A1 = VIL. The other address bits may be set to either V IL or VIH. The Device Code for the M29F016D ADh. The Block Protection Status of each block can be read using a Bus Read operation with A0 = V IL , A1 = V IH, and A12-A20 specifying the address of the block. The other address bits may be set to either V IL or VIH. If the addressed block is protected then 01h is output on Data Inputs/Outputs DQ0DQ7, otherwise 00h is output. Program Command. The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller.
If the address falls in a protected block then the Program command is ignored, the data remains unchanged. The Status Register is never read and no error condition is given. During the program operation the memory will ignore all commands. It is not possible to issue any command to abort or pause the operation. Typical program times are given in Table 4. Bus Read operations during the program operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the program operation has completed the memory will return to the Read mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. Note that the Program command cannot change a bit set at '0' back to '1'. One of the Erase Commands must be used to set all the bits in a block or in the whole memory from '0' to '1'. Unlock Bypass Command. The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memory. When the cycle time to the device is long (as with some EPROM programmers) considerable time saving can be made by using these commands. Three Bus Write operations are required to issue the Unlock Bypass command. Once the Unlock Bypass command has been issued the memory will only accept the Unlock Bypass Program command and the Unlock Bypass Reset command. The memory can be read as if in Read mode. Unlock Bypass Program Command. The Unlock Bypass Program command can be used to program one address in the memory array at a time. The command requires two Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. The Program operation using the Unlock Bypass Program command behaves identically to the Program operation using the Program command. A protected block cannot be programmed; the operation cannot be aborted and the Status Register is read. Errors must be reset using the Read/Reset command, which leaves the device in Unlock Bypass Mode. See the Program command for details on the behavior. Unlock Bypass Reset Command. The Unlock Bypass Reset command can be used to return to Read/Reset mode from Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass Reset command. Read/Reset
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M29F016D
command does not exit from Unlock Bypass Mode. Chip Erase Command. The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are required to issue the Chip Erase Command and start the Program/Erase Controller. If any blocks are protected then these are ignored and all the other blocks are erased. If all of the blocks are protected the Chip Erase operation appears to start but will terminate within about 100s, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the erase operation the memory will ignore all commands, including the Erase Suspend command. It is not possible to issue any command to abort the operation. Typical chip erase times are given in Table 4. All Bus Read operations during the Chip Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Chip Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read Mode. The Chip Erase Command sets all of the bits in unprotected blocks of the memory to '1'. All previous data is lost. Block Erase Command. The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block. The Block Erase operation starts the Program/Erase Controller about 50s after the last Bus Write operation. Once the Program/Erase Controller starts it is not possible to select any more blocks. Each additional block must therefore be selected within 50s of the last block. The 50s timer restarts when an additional block is selected. The Status Register can be read after the sixth Bus Write operation. See the Status Register section for details on how to identify if the Program/ Erase Controller has started the Block Erase operation. If any selected blocks are protected then these are ignored and all the other selected blocks are erased. If all of the selected blocks are protected the Block Erase operation appears to start but will terminate within about 100s, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the Block Erase operation the memory will ignore all commands except the Erase Suspend command. Typical block erase times are given in Table 4. All Bus Read operations during the Block Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Block Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. The Block Erase Command sets all of the bits in the unprotected selected blocks to '1'. All previous data in the selected blocks is lost. Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within 15s of the Erase Suspend Command being issued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before the Program/Erase Controller starts) then the Erase is suspended immediately and will start immediately when the Erase Resume Command is issued. It is not possible to select any further blocks to erase after the Erase Resume.
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During Erase Suspend it is possible to Read and Program cells in blocks that are not being erased; both Read and Program operations behave as normal on these blocks. If any attempt is made to program in a protected block or in the suspended block then the Program command is ignored and the data remains unchanged. The Status Register is not read and no error condition is given. Reading from blocks that are being erased will output the Status Register. It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands during an Erase Suspend. The Read/Reset command must be issued to return the device to Read Array mode before the Resume command will be accepted. Erase Resume Command. The Erase Resume command must be used to restart the Program/ Erase Controller after an Erase Suspend. The device must be in Read Array mode before the Resume command will be accepted. An erase can be suspended and resumed more than once. Read CFI Query Command. The Read CFI Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. This Table 3. Commands
Command Length Bus Write Operations 1st Addr X 555 555 555 555 X X 555 555 X X 55 Data F0 AA AA AA AA A0 90 AA AA B0 30 98 2AA 2AA 2AA 2AA PA X 2AA 2AA 55 55 55 55 PD 00 55 55 555 555 80 80 555 555 AA AA 2AA 2AA 55 55 555 BA 10 30 X 555 555 555 F0 90 A0 20 PA PD 2nd Addr Data 3rd Addr Data 4th Addr Data 5th Addr Data 6th Addr Data
command is valid when the device is in the Read Array mode, or when the device is in Autoselected mode. One Bus Write cycle is required to issue the Read CFI Query Command. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface Memory Area. The Read/Reset command must be issued to return the device to the previous mode (the Read Array mode or Autoselected mode). A second Read/ Reset command would be needed if the device is to be put in the Read Array mode from Autoselected mode. See Appendix B, Tables 16, 17, 18, 19, 20 and 21 for details on the information contained in the Common Flash Interface (CFI) memory area. Block Protect and Chip Unprotect Commands. Groups of blocks can be protected against accidental Program or Erase. The Protection Groups are shown in Appendix A, Table 15. The whole chip can be unprotected to allow the data inside the blocks to be changed. Block Protect and Chip Unprotect operations are described in Appendix C.
1 Read/Reset 3 Auto Select Program Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Chip Erase Block Erase Erase Suspend Erase Resume Read CFI Query 3 4 3 2 2 6 6+ 1 1 1
Note: X Don't Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
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Table 4. Program, Erase Times and Program, Erase Endurance Cycles
Parameter Chip Erase Block Erase (64 Kbytes) Program (Byte) Chip Program (Byte by Byte) Program/Erase Cycles (per Block)
Note: 1. TA = 25C, VCC = 5V.
Min
Typ (1) 25 0.8 10 25
Typical after 100k W/E Cycles (1) 25
Max 120 6 200 120
Unit s s s s cycles
100,000
STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations. It is also read during Erase Suspend when an address within a block being erased is accessed. The bits in the Status Register are summarized in Table 5, Status Register Bits. Data Polling Bit (DQ7). The Data Polling Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Data Polling Bit is output on DQ7 when the Status Register is read. During Program operations the Data Polling Bit outputs the complement of the bit being programmed to DQ7. After successful completion of the Program operation the memory returns to Read mode and Bus Read operations from the address just programmed output DQ7, not its complement. During Erase operations the Data Polling Bit outputs '0', the complement of the erased state of DQ7. After successful completion of the Erase operation the memory returns to Read Mode. In Erase Suspend mode the Data Polling Bit will output a '1' during a Bus Read operation within a block being erased. The Data Polling Bit will change from a '0' to a '1' when the Program/Erase Controller has suspended the Erase operation. Figure 6, Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A Valid Address is the address being programmed or an address within the block being erased. Toggle Bit (DQ6). The Toggle Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Toggle Bit is output on DQ6 when the Status Register is read. During Program and Erase operations the Toggle Bit changes from '0' to '1' to '0', etc., with succes-
sive Bus Read operations at any address. After successful completion of the operation the memory returns to Read mode. During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has suspended the Erase operation. If any attempt is made to erase a protected block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 100s. If any attempt is made to program a protected block or a suspended block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 1s. Figure 7, Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit. Error Bit (DQ5). The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to '1' when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued before other commands are issued. The Error bit is output on DQ5 when the Status Register is read. Note that the Program command cannot change a bit set to '0' back to '1' and attempting to do so will set DQ5 to `1'. A Bus Read operation to that address will show the bit is still `0'. One of the Erase commands must be used to set all the bits in a block or in the whole memory from '0' to '1'. Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase command. Once the Program/Erase Controller starts erasing the Erase Timer Bit is set to '1'. Before the Program/Erase Controller starts the Erase Timer Bit is set to '0' and additional blocks to be erased may be written to the Command Interface. The Erase Timer Bit is output on DQ3 when the Status Register is read.
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Alternative Toggle Bit (DQ2). The Alternative Toggle Bit can be used to monitor the Program/ Erase controller during Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is read. During Chip Erase and Block Erase operations the Toggle Bit changes from '0' to '1' to '0', etc., with successive Bus Read operations from addresses within the blocks being erased. A protected block is treated the same as a block not being erased. Once the operation completes the memory returns to Read mode. During Erase Suspend the Alternative Toggle Bit changes from '0' to '1' to '0', etc. with successive Table 5. Status Register Bits
Operation Program Program During Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Non-Erasing Block Erasing Block Erase Suspend Non-Erasing Block Good Block Address Erase Error Faulty Block Address
Note: Unspecified data bits should be ignored.
Bus Read operations from addresses within the blocks being erased. Bus Read operations to addresses within blocks not being erased will output the memory cell data as if in Read mode. After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be used to identify which block or blocks have caused the error. The Alternative Toggle Bit changes from '0' to '1' to '0', etc. with successive Bus Read Operations from addresses within blocks that have not erased correctly. The Alternative Toggle Bit does not change if the addressed block has erased correctly.
Address Any Address Any Address Any Address Any Address Erasing Block Non-Erasing Block Erasing Block
DQ7 DQ7 DQ7 DQ7 0 0 0 0 0 1
DQ6 Toggle Toggle Toggle Toggle Toggle Toggle Toggle Toggle No Toggle
DQ5 0 0 1 0 0 0 0 0 0
DQ3 - - - 1 0 0 1 1 -
DQ2 - - - Toggle Toggle No Toggle Toggle No Toggle Toggle
RB 0 0 0 0 0 0 0 0 1 1
Data read as normal 0 0 Toggle Toggle 1 1 1 1 No Toggle Toggle
0 0
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Figure 6. Data Polling Flowchart
START
Figure 7. Data Toggle Flowchart
START READ DQ5 & DQ6
READ DQ5 & DQ7 at VALID ADDRESS
READ DQ6 DQ7 = DATA NO NO YES DQ6 = TOGGLE YES DQ5 =1 NO YES READ DQ7 at VALID ADDRESS DQ5 =1 YES READ DQ6 TWICE DQ7 = DATA NO FAIL PASS YES DQ6 = TOGGLE YES FAIL
AI05278 AI05279
NO
NO
PASS
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MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at Table 6. Absolute Maximum Ratings
Symbol TBIAS TSTG VIO VCC VID Temperature Under Bias Storage Temperature Input or Output Voltage (1) Supply Voltage Identification Voltage Parameter Min -50 -65 -0.6 -0.6 -0.6 Max 125 150 VCC + 0.6 6 13.5 Unit C C V V V
these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Note: 1. Minimum Voltage may undershoot to -2V or overshoot to VCC +2V during transition for a maximum of 20ns.
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DC AND AC PARAMETERS This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement
Conditions summarized in Table 7, Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters.
Table 7. Operating and AC Measurement Conditions
M29F016D Parameter Min VCC Supply Voltage Ambient Operating Temperature Load Capacitance (CL) Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages 0 to 3 1.5 4.5 - 40 30 10 0.45 to 2.4 0.8 and 2.0 55 Max 5.5 85 Min 4.5 - 40 100 10 70/ 90 Max 5.5 85 V C pF ns V V Unit
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
1.3V
High Speed (55ns) 3V 1.5V 0V DEVICE UNDER TEST 2.0V 0.8V
AI05276
VCC
1N914
3.3k
Standard (70, 90ns) 2.4V
OUT CL
0.45V
0.1F
CL includes JIG capacitance
AI05277
Table 8. Device Capacitance
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 6 12 Unit pF pF
Note: Sampled only, not 100% tested.
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Table 9. DC Characteristics
Symbol ILI ILO ICC1 ICC2 ICC3 ICC4 (1) VIL VIH VOL VOH Output High Voltage CMOS VID IID VLKO (1) Identification Voltage Identification Current Program/Erase Lockout Supply Voltage A9 = VID 3.2 Parameter Input Leakage Current Output Leakage Current Supply Current (Read) Supply Current (Standby) TTL Supply Current (Standby) CMOS Supply Current (Program/Erase) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL IOL = 5.8mA IOH = -2.5mA IOH = -100A 2.4 VCC - 0.4 11.5 12.5 100 4.2 Test Condition 0V VIN VCC 0V VOUT VCC E = VIL, G = VIH, f = 6MHz E = VIH E = VCC 0.2V, RP = VCC 0.2V Program/Erase Controller active -0.5 2 Min Max 1 1 20 2 150 20 0.8 VCC + 0.5 0.45 Unit A A mA mA A mA V V V V V V A V
Note: 1. Sampled only, not 100% tested.
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Figure 10. Read AC Waveforms
tAVAV A0-A20 tAVQV E tELQV tELQX G tGLQX tGLQV DQ0-DQ7 tGHQX tGHQZ VALID
AI05272
VALID tAXQX
tEHQX tEHQZ
Table 10. Read AC Characteristics
M29F016D Symbol Alt Parameter Test Condition 55 tAVAV tAVQV tELQX (1) tELQV tGLQX (1) tGLQV tEHQZ (1) tGHQZ (1) tEHQX tGHQX tAXQX tRC tACC tLZ tCE tOLZ tOE tHZ tDF tOH Address Valid to Next Address Valid Address Valid to Output Valid Chip Enable Low to Output Transition Chip Enable Low to Output Valid Output Enable Low to Output Transition Output Enable Low to Output Valid Chip Enable High to Output Hi-Z Output Enable High to Output Hi-Z Chip Enable, Output Enable or Address Transition to Output Transition E = VIL, G = VIL E = VIL, G = VIL G = VIL G = VIL E = VIL E = VIL G = VIL E = VIL Min Max Min Max Min Max Max Max Min 55 55 0 55 0 30 18 18 0 70/ 90 70 70 0 70 0 30 20 20 0 ns ns ns ns ns ns ns ns ns Unit
Note: 1. Sampled only, not 100% tested.
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Figure 11. Write AC Waveforms, Write Enable Controlled
tAVAV A0-A20 VALID tWLAX tAVWL E tELWL G tGHWL W tWHWL tDVWH DQ0-DQ7 VALID tWHDX tWLWH tWHGL tWHEH
VCC tVCHEL RB tWHRL
AI05273
Table 11. Write AC Characteristics, Write Enable Controlled
M29F016D Symbol tAVAV tELWL tWLWH tDVWH tWHDX tWHEH tWHWL tAVWL tWLAX tGHWL tWHGL tWHRL (1) tVCHEL tOEH tBUSY tVCS Alt tWC tCS tWP tDS tDH tCH tWPH tAS tAH Parameter 55 Address Valid to Next Address Valid Chip Enable Low to Write Enable Low Write Enable Low to Write Enable High Input Valid to Write Enable High Write Enable High to Input Transition Write Enable High to Chip Enable High Write Enable High to Write Enable Low Address Valid to Write Enable Low Write Enable Low to Address Transition Output Enable High to Write Enable Low Write Enable High to Output Enable Low Program/Erase Valid to RB Low VCC High to Chip Enable Low Min Min Min Min Min Min Min Min Min Min Min Max Min 55 0 45 45 0 0 20 0 45 0 0 30 50 70/ 90 70 0 45 45 0 0 20 0 45 0 0 30 50 ns ns ns ns ns ns ns ns ns ns ns ns s Unit
Note: 1. Sampled only, not 100% tested.
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Figure 12. Write AC Waveforms, Chip Enable Controlled
tAVAV A0-A20 VALID tELAX tAVEL W tWLEL G tGHEL E tEHEL tDVEH DQ0-DQ7 VALID tEHDX tELEH tEHGL tEHWH
VCC tVCHWL RB tEHRL
AI05274
Table 12. Write AC Characteristics, Chip Enable Controlled
M29F016D Symbol tAVAV tWLEL tELEH tDVEH tEHDX tEHWH tEHEL tAVEL tELAX tGHEL tEHGL tEHRL (1) tVCHWL tOEH tBUSY tVCS Alt tWC tWS tCP tDS tDH tWH tCPH tAS tAH Parameter 55 Address Valid to Next Address Valid Write Enable Low to Chip Enable Low Chip Enable Low to Chip Enable High Input Valid to Chip Enable High Chip Enable High to Input Transition Chip Enable High to Write Enable High Chip Enable High to Chip Enable Low Address Valid to Chip Enable Low Chip Enable Low to Address Transition Output Enable High Chip Enable Low Chip Enable High to Output Enable Low Program/Erase Valid to RB Low VCC High to Write Enable Low Min Min Min Min Min Min Min Min Min Min Min Max Min 55 0 45 45 0 0 20 0 45 0 0 30 50 70/ 90 70 0 45 45 0 0 20 0 45 0 0 30 50 ns ns ns ns ns ns ns ns ns ns ns ns s Unit
Note: 1. Sampled only, not 100% tested.
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Figure 13. Reset/Block Temporary Unprotect AC Waveforms
W, E, G tPHWL, tPHEL, tPHGL RB tRHWL, tRHEL, tRHGL RP tPLPX tPHPHH tPLYH
AI02931B
Table 13. Reset/Block Temporary Unprotect AC Characteristics
M29F016D Symbol tPHWL (1) tPHEL tPHGL (1) tRHWL (1) tRHEL (1) tRHGL
(1)
Alt
Parameter 55 RP High to Write Enable Low, Chip Enable Low, Output Enable Low 70/ 90
Unit
tRH
Min
50
50
ns
tRB
RB High to Write Enable Low, Chip Enable Low, Output Enable Low RP Pulse Width
Min
0
0
ns
tPLPX tPLYH (1) tPHPHH (1)
tRP
Min Max Min
500 10 500
500 10 500
ns s ns
tREADY RP Low to Read Mode tVIDR RP Rise Time to VID
Note: 1. Sampled only, not 100% tested.
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PACKAGE MECHANICAL TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Outline
A2
1 N
e E B
N/2
D1 D
A CP
DIE
C
TSOP-a
A1
L
Note: Drawing is not to scale.
TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Mechanical Data
millimeters Symbol Typ A A1 A2 B C D D1 E e L N CP 0.500 0.050 0.950 0.170 0.100 19.800 18.300 9.900 - 0.500 0 40 0.100 Min Max 1.200 0.150 1.050 0.270 0.210 20.200 18.500 10.100 - 0.700 5 0.0197 0.0020 0.0374 0.0067 0.0039 0.7795 0.7205 0.3898 - 0.0197 0 40 0.0039 Typ Min Max 0.0472 0.0059 0.0413 0.0106 0.0083 0.7953 0.7283 0.3976 - 0.0276 5 inches
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SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline
A2 b e D
A C CP
N
E
EH
1
A1
L
SO-d
Note: Drawing is not to scale.
SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data
millimeters Symbol Typ A A1 A2 b C CP E D e HE L N 13.30 28.20 1.27 16.00 0.80 44 8 13.20 28.00 - 15.75 2.30 0.40 0.15 0.10 2.20 0.35 0.10 2.40 0.50 0.20 0.08 13.50 28.40 - 16.25 0.5236 1.1102 0.0500 0.6299 0.0315 44 8 0.5197 1.1024 - 0.6201 0.0906 0.0157 0.0059 Min Max 2.80 0.0039 0.0866 0.0138 0.0039 0.0945 0.0197 0.0079 0.0030 0.5315 1.1181 - 0.6398 Typ Min Max 0.1102 inches
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PART NUMBERING Table 14. Ordering Information Scheme
Example: Device Type M29 Operating Voltage F = VCC = 5V 10% Device Function 016D = 16 Mbit (2Mb x8), Uniform Block
M29F016D
55
N
1
T
Speed 55 = 55 ns 70 = 70 ns 90 = 90 ns Package N = TSOP40: 10 x 20 mm M = SO44 Temperature Range 1 = 0 to 70 C 6 = -40 to 85 C Option T = Tape & Reel Packing
Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you.
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APPENDIX A. BLOCK ADDRESS TABLE Table 15. Block Addresses, M29F016D
# 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Size, KByte 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 64 Address Range 1F0000h-1FFFFFh 1E0000h-1EFFFFh 1D0000h-1DFFFFh 1C0000h-1CFFFFh 1B0000h-1BFFFFh 1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh 120000h-12FFFFh 110000h-11FFFFh 100000h-10FFFFh 0F0000h-0FFFFFh 0E0000h-0EFFFFh 0D0000h-0DFFFFh 0C0000h-0CFFFFh 0B0000h-0BFFFFh 0A0000h-0AFFFFh 090000h-09FFFFh 080000h-08FFFFh 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 000000h-00FFFFh 0 1 2 3 4 5 6 7 Protection Group
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APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the CFI Query Command is issued the device enters CFI Query mode and the data structure Table 16. Query Structure Overview
Address 10h 1Bh 27h 40h 61h Sub-section Name CFI Query Identification String System Interface Information Device Geometry Definition Primary Algorithm-specific Extended Query table Security Code Area Description Command set ID and algorithm data offset Device timing & voltage information Flash device layout Additional information specific to the Primary Algorithm (optional) 64 bit unique device number
is read from the memory. Tables 16, 17, 18, 19, 20 and 21 show the addresses used to retrieve the data. The CFI data structure also contains a security area where a 64 bit unique security number is written (see Table 21, Security Code area). This area can be accessed only in Read mode by the final user. It is impossible to change the security number after it has been written by ST. Issue a Read command to return to Read mode.
Note: Query data are always presented on the lowest order data outputs.
Table 17. CFI Query Identification String
Address 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Data 51h 52h 59h 02h 00h 40h Address for Primary Algorithm extended Query table (see Table 19) 00h 00h 00h 00h 00h Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported Address for Alternate Algorithm extended Query table NA P = 40h Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm Query Unique ASCII String "QRY" Description Value "Q" "R" "Y" AMD Compatible
NA
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M29F016D
Table 18. CFI Query System Interface Information
Address 1Bh Data 45h Description VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VPP [Programming] Supply Minimum Program/Erase voltage 00h not supported VPP [Programming] Supply Maximum Program/Erase voltage 00h not supported Typical timeout per single byte program = 2n s Typical timeout for minimum size write buffer program = 2n s Typical timeout per individual block erase = 2n ms Typical timeout for full chip erase = 2n ms Maximum timeout for byte program = 2n times typical Maximum timeout for write buffer program = 2n times typical Maximum timeout per individual block erase = 2n times typical Maximum timeout for chip erase = 2n times typical Value 4.5V
1Ch
55h
5.5V
1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h
00h 00h 04h 00h 0Ah 00h 04h 00h 03h 00h
NA NA 16s NA 1s see note (1) 256s NA 8s see note (1)
Note: 1. Not supported in the CFI
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Table 19. Device Geometry Definition
Address 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h Data 15h 00h 00h 00h 00h 01h 1Fh 00h 00h 01h Description Device Size = 2n in number of bytes Flash Device Interface Code description Maximum number of bytes in multi-byte program or page = 2n Number of Erase Block Regions within the device. It specifies the number of regions within the device containing contiguous Erase Blocks of the same size. Region 1 Information Number of identical size erase block = 001Fh+1 Region 1 Information Block size in Region 1 = 0100h * 256 byte Value 2 MByte x8 only Async. NA
1
32 64 Kbyte
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Table 20. Primary Algorithm-Specific Extended Query Table
Address 40h 41h 42h 43h 44h 45h Data 50h 52h 49h 31h 30h 00h Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (bits 1 to 0) 00 = required, 01= not required Silicon Revision Number (bits 7 to 2) Erase Suspend 00 = not supported, 01 = Read only, 02 = Read and Write Block Protection 00 = not supported, x = number of blocks per group Temporary Block Unprotect 00 = not supported, 01 = supported Block Protect /Unprotect 04 = M29W400B mode Simultaneous Operations, 00 = not supported Burst Mode, 00 = not supported, 01 = supported Page Mode, 00 = not supported, 01 = 4 page word, 02 = 8 page word Primary Algorithm extended Query table unique ASCII string "PRI" Description Value "P" "R" "I" "1" "0" Yes
46h 47h 48h 49h 4Ah 4Bh 4Ch
02h 04h 01h 04h 00h 00h 00h
2 4 yes 4 No No No
Table 21. Security Code Area
Address 61h 62h 63h 64h 65h 66h 67h 68h Data XX XX XX XX XX XX XX XX 64 bit: unique device number Description
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APPENDIX C. BLOCK PROTECTION Block protection can be used to prevent any operation from modifying the data stored in the memory. The blocks are protected in groups, refer to Appendix A, Table 15 for details of the Protection Groups. Once protected, Program and Erase operations within the protected group fail to change the data. There are three techniques that can be used to control Block Protection, these are the Programmer technique, the In-System technique and Temporary Unprotection. Temporary Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is described in the Signal Descriptions section. To protect the Extended Block issue the Enter Extended Block command and then use either the Programmer or In-System technique. Once protected issue the Exit Extended Block command to return to read mode. The Extended Block protection is irreversible, once protected the protection cannot be undone. Programmer Technique The Programmer technique uses high (V ID) voltage levels on some of the bus pins. These cannot be achieved using a standard microprocessor bus, therefore the technique is recommended only for use in Programming Equipment. To protect a group of blocks follow the flowchart in Figure 14, Programmer Equipment Block Protect Flowchart. To unprotect the whole chip it is necessary to protect all of the groups first, then all groups can be unprotected at the same time. To unprotect the chip follow Figure 15, Programmer Equipment Chip Unprotect Flowchart. Table 22,
Programmer Technique Bus Operations, gives a summary of each operation. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. In-System Technique The In-System technique requires a high voltage level on the Reset/Blocks Temporary Unprotect pin, RP. This can be achieved without violating the maximum ratings of the components on the microprocessor bus, therefore this technique is suitable for use after the memory has been fitted to the system. To protect a group of blocks follow the flowchart in Figure 16, In-System Block Protect Flowchart. To unprotect the whole chip it is necessary to protect all of the groups first, then all the groups can be unprotected at the same time. To unprotect the chip follow Figure 17, In-System Chip Unprotect Flowchart. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not allow the microprocessor to service interrupts that will upset the timing and do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing.
Table 22. Programmer Technique Bus Operations, BYTE = V IH or VIL
Operation Block (Group) Protect(1) Chip Unprotect Block (Group) Protection Verify Block (Group) Unprotection Verify E VIL VID G VID VID W VIL Pulse VIL Pulse Address Inputs A0-A20 A9 = VID, A12-A20 Block Address Others = X A9 = VID, A12 = VIH, A15 = VIH Others = X A0 = VIL, A1 = VIH, A6 = VIL, A9 = VID, A12-A20 Block Address Others = X A0 = VIL, A1 = VIH, A6 = VIH, A9 = VID, A12-A20 Block Address Others = X Data Inputs/Outputs DQ15A-1, DQ14-DQ0 X X Pass = XX01h Retry = XX00h Retry = XX01h Pass = XX00h
VIL
VIL
VIH
VIL
VIL
VIH
Note: 1. Block Protection Groups are shown in Appendix A, Table 15.
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Figure 14. Programmer Equipment Group Protect Flowchart
START
ADDRESS = GROUP ADDRESS Set-up W = VIH n=0
G, A9 = VID, E = VIL
Wait 4s Protect W = VIL Wait 100s W = VIH E, G = VIH, A0, A6 = VIL, A1 = VIH E = VIL Wait 4s G = VIL Wait 60ns Read DATA
Verify
DATA NO = 01h YES A9 = VIH E, G = VIH End PASS ++n = 25 YES A9 = VIH E, G = VIH FAIL
AI05574
NO
Note: Block Protection Groups are shown in Appendix A, Table 15.
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Figure 15. Programmer Equipment Chip Unprotect Flowchart
START PROTECT ALL GROUPS Set-up n=0 CURRENT GROUP = 0
A6, A12, A15 = VIH(1) E, G, A9 = VID
Wait 4s Unprotect W = VIL Wait 10ms W = VIH E, G = VIH
ADDRESS = CURRENT GROUP ADDRESS A0 = VIL, A1, A6 = VIH
E = VIL Wait 4s G = VIL Verify Wait 60ns Read DATA
INCREMENT CURRENT GROUP
NO
DATA = 00h
YES
NO
++n = 1000 YES
LAST GROUP YES A9 = VIH E, G = VIH PASS
NO
End
A9 = VIH E, G = VIH FAIL
AI05575
Note: Block Protection Groups are shown in Appendix A, Table 15.
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Figure 16. In-System Equipment Group Protect Flowchart
START Set-up n=0 RP = VID WRITE 60h ADDRESS = GROUP ADDRESS A0 = VIL, A1 = VIH, A6 = VIL
Protect
WRITE 60h ADDRESS = GROUP ADDRESS A0 = VIL, A1 = VIH, A6 = VIL
Wait 100s WRITE 40h ADDRESS = GROUP ADDRESS A0 = VIL, A1 = VIH, A6 = VIL Verify
Wait 4s READ DATA ADDRESS = GROUP ADDRESS A0 = VIL, A1 = VIH, A6 = VIL
DATA NO = 01h YES RP = VIH End ISSUE READ/RESET COMMAND ++n = 25 YES RP = VIH ISSUE READ/RESET COMMAND NO
PASS
FAIL
AI05576
Note: Block Protection Groups are shown in Appendix A, Table 15.
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Figure 17. In-System Equipment Chip Unprotect Flowchart
START PROTECT ALL GROUPS Set-up n=0 CURRENT GROUP = 0
RP = VID WRITE 60h ANY ADDRESS WITH A0 = VIL, A1 = VIH, A6 = VIH
Unprotect
WRITE 60h ANY ADDRESS WITH A0 = VIL, A1 = VIH, A6 = VIH
Wait 10ms
WRITE 40h ADDRESS = CURRENT GROUP ADDRESS A0 = VIL, A1 = VIH, A6 = VIH Verify
Wait 4s READ DATA ADDRESS = CURRENT GROUP ADDRESS A0 = VIL, A1 = VIH, A6 = VIH INCREMENT CURRENT GROUP
NO
DATA = 00h
YES
NO
++n = 1000 YES RP = VIH
LAST GROUP YES RP = VIH
NO
End
ISSUE READ/RESET COMMAND
ISSUE READ/RESET COMMAND
FAIL
PASS
AI05577
Note: Block Protection Groups are shown in Appendix A, Table 15.
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REVISION HISTORY Table 23. Document Revision History
Date 22-Jun-2001 03-Dec-2001 Version -01 -02 First Issue 90ns Speed Class added, Block Protection Appendix added, SO44 drawing and package mechanical data updated, CFI Table 22, address 2Fh data clarified, Read/Reset operation during Erase Suspend clarified . Description of Ready/Busy signal clarified (and Figure 13 modified) Clarified allowable commands during block erase Clarified the mode the device returns to in the CFI Read Query command section Document promoted to full datasheet. No paragraphs, parameters or illustrations changed. Revision numbering modified: a minor revision is indicated by incrementing the digit after the dot, and a major revision, by incrementing the digit before the dot (revision version 03 equals 3.0) Revision Details
05-Apr-2002
-03
15-Jul-2003
3.1
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2003 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com
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